Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.
Our Opportunity Summary: As a Memory Design Engineer in our HBM organization, you will be responsible for crafting and analyzing digital and analog circuits used in the development of memory products. This includes simulating, optimizing, and floor planning DRAM circuits. In this position, you will collaborate with various design and verification teams globally and support the efforts of groups such as Product Engineering, Test, Probe, Process Integration, Assembly, and Marketing to craft HBM products that optimize manufacturing functions and assure the best performance, power, cost, quality, reliability, time-to-market, and customer satisfaction.
In HBM DEG (High Bandwidth Memory - DRAM Engineering Group), we innovate and integrate groundbreaking front-end and backend processes with design, debugging tests, and qualification techniques to develop low power per bit solutions to improve customer experience in Machine Learning (ML) and Artificial Intelligence (AI). The success of HBM relies on vertical integration and collaboration among various engineering teams.
What's Encouraged Daily: Contributing to the development of new HBM product opportunities by assisting with the overall design, layout, and optimization of Memory, Logic, and Analog circuits.Parasitic modeling and assisting in design validation, reticle experiments, and required tape-out revisions.Overseeing and managing the layout process including floor-planning, placement, and routing.Performing verification processes with modeling and simulation using industry standard simulators.Maintaining technical expertise and providing training.Contributing to cross-group communication to work towards standardization and group success.Working with Marketing, Probe, Assembly, Test, Process Integration, and Product Engineering groups to ensure proper manufacturability of product.Driving innovation into future Memory generations within a dynamic work environment.Mentoring junior members of staff.How To Qualify: Extensive knowledge of CMOS Circuit Design and Device Physics.Experience with power network analysis.Extensive knowledge of Verilog modeling and simulation tools.Extensive knowledge of state machine logic/design verification techniques.Familiarity with memory design is required.What Sets You Apart: Good verbal and written communication skills with the ability to efficiently synthesize and convey sophisticated technical concepts.Familiarity with schematic entry and simulation using Finesim and/or Hspice.Proven track record of innovation and problem-solving in high-performance memory development.A self-motivated, hard-working team player who enjoys working with diverse abilities and backgrounds.Excellent problem-solving and analytical skills.Having an innovative approach that is open to improving upon any of our processes or products.Potential Team Member Locations: Folsom, CAAtlanta, GAAllen, TXRequired Experience: BSEE or greater.3+ years of relevant Engineering or Design Engineering experience.Job title and level can scale depending on experience and qualifications.
Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.
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