Our vision is to transform how the world uses information to enrich life forall.
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.
As a Sr. Device Engineer working in the R&D DRAM Device and Cell Technology Group at Micron, you will be working in an industry leading 300mm R&D facility on technology to enable future memory scaling. You will be responsible for the testing and characterization of future DRAM memory, analyzing electrical failures and probe data, defining electrical specifications, improvement of yield and quality and of overall cell performance. In addition to a broad basis of Device knowledge, you have a deep understanding of Semiconductor Device Physics including CMOS, BJT, diodes, etc. You interact significantly with material, process, design, modeling, characterization, and product groups.
Responsibilities include, but not limited to:
Characterize DRAM memory arrays on bench and other platforms to identify fail modes and guide process development.
Develop understanding of process and device requirements for current and future DRAM memory cell and access device technologies and help establish electrical specifications.
Characterize the memory array and model cell device and access device properties to identify improvement opportunities for yield, quality, and cost metrics.
Contribute to the cell material and process flow definition.
Understand and develop physical and electrical models for fundamental yield-limiting mechanisms in DRAM technologies through statistical data analysis of experiments conducted in semiconductor fab.
Evaluate in-line, probe, parametric, and back-end data.
Devise and execute experiments and stress tests to evaluate DRAM memory cell and access device capabilities and properties and the effects on reliability, functionality, and performance.
Evaluate memory management and ECC to improve product quality and reliability metrics for current and future generations of DRAM memories.
Provide project status updates to the team and management at a regular cadence.
Collaborate effectively with cross-functional teams, including product, modeling, design & process integration engineers, to address cell deficiencies and execute improvement roadmaps.
Qualifications:
4+ years of relevant industry experience specific to memory device engineering.
You have a detailed knowledge of mainstream memory technologies such as DRAM, NAND, NOR, & SRAM acquired through significant industry experience.
Expertise in device physics.
You are very familiar with both Process Integration & Circuit/Architecture issues as they relate to memory.
You are proficient with data analysis, DOE, and statistical techniques (JMP, Python).
Good written and verbal communication skills required.
Excellent problem-solving, analytical, organizational, and team building skills
Education:
MS or PhD in Electrical Engineering, Physics, or other related technical field is required.
As a world leader in the semiconductor industry, Micron is dedicated to your personal wellbeing and professional growth. Micron benefits are designed to help you stay well, provide peace of mind and help you prepare for the future. We offer a choice of medical, dental and vision plans in all locations enabling team members to select the plans that best meet their family healthcare needs and budget. Micron also provides benefit programs that help protect your income if you are unable to work due to illness or injury, and paid family leave. Additionally, Micron benefits include a robust paid time-off program and paid holidays.For additional information regarding the Benefit programs available, please see the Benefits Guide posted onmicron.com/careers/benefits.
Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.
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